Semiconductor device
文献类型：专利
| 作者 | FUKUZAWA TADASHI; MATSUMURA HIROYOSHI |
| 发表日期 | 1988-05-28 |
| 专利号 | JP1988124591A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To prevent deterioration in monitoring sensitivity, by using the same epitaxial crystal as an active layer and a photodetector for laser, and enhancing the dimensions for confining the quantum of the active layer of the laser higher than the dimensions of the quantum of the photodetector. CONSTITUTION:On an n-GaAs substrate 1, an n-Ga0.5Al0.5As clad layer 2 and non-doped GaAs/Ga0.8Al0.2As super-lattice active layer 10 are grown. A line and space pattern is formed in the direction of a resonator only at a part corresponding to the active layer 10 for laser by using an electron beam lithography method. The pattern is transferred to the super-lattice by a dry etching method, and a thin quantum line is formed. After the resist is removed, the thin quantum line of the super-lattice is embedded with Ga0.8Al0.2As, and a Ga0.5Al0.5As clad layer 4 and a p-GaAs cap 5 are grown. After electrodes 6, 8 and 9 are formed, a groove 7, which electrically isolates a laser part and a light receiving part, is formed. Thus a monolithic integrated circuit, which can monitor the oscillating intensity of the thin quantum line laser, can be obtained. |
| 公开日期 | 1988-05-28 |
| 申请日期 | 1986-11-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87962]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | FUKUZAWA TADASHI,MATSUMURA HIROYOSHI. Semiconductor device. JP1988124591A. 1988-05-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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