Semiconductor laser diode
文献类型：专利
| 作者 | MURASAWA, SATOSHI; TAKAYAMA, TORU; KIDOGUCHI, ISAO |
| 发表日期 | 2007-06-07 |
| 专利号 | US20070127532A1 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode |
| 英文摘要 | A semiconductor laser diode includes, on a substrate, a first cladding layer; an active layer formed on the first cladding layer; a second cladding layer formed on the active layer and having a ridge stripe for injecting a current into the active layer; and a light emitting portion formed on both sides of the ridge stripe and having a current blocking layer for confining the current in the ridge stripe. A distance from a lower face of the current blocking layer to an upper face of the active layer is within a given range. Also, the current spreads beyond a width of the ridge stripe after passing the ridge stripe and before reaching the active layer. |
| 公开日期 | 2007-06-07 |
| 申请日期 | 2006-09-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87963]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | MURASAWA, SATOSHI,TAKAYAMA, TORU,KIDOGUCHI, ISAO. Semiconductor laser diode. US20070127532A1. 2007-06-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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