Semiconductor laser element
文献类型：专利
| 作者 | IMASHIYOU YOSHIHIRO; MAKINO TOSHIHIKO; KASHIWA TORU |
| 发表日期 | 1990-03-16 |
| 专利号 | JP1990077187A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To provide a semiconductor laser element capable of alleviating requirement for width of an active layer required for fundamental horizontal mode oscillation by providing a semiconductor layer having composition of In1-x', Gax', Asy', P1-y' different from that of the active layer and doped with Fe. CONSTITUTION:On an N-type InP substrate 1, there are deposited an N-type InP clad layer 2, an In1-x, Gax, Asy, P1-y active layer 3, a P-type InP clad layer 4 and an InGaAsP cap layer 5 sequentially in that order. Then, the structure is etched to form a mesa extending from the layer 5 to the substrate The opposite sides of the mesa are filled with an In1-x', Gax', Asy', P1-y' layer 9 by a vapor growth method. An SiO2 film 6 is deposited thereon and P- and N-type electrodes 7 and 8 are provided. The high resistance In1-x', Gax', Asy', P1-y' layer 9 has a band gap wavelength of 1mum and is doped with Fe to have resistivity of 1X10OMEGA.cm. When oscillation wavelength is 3mum and the active layer 3 has thickness of 0.15mum, cut-off width of fundamental horizontal mode is about 2mum, wider than 3mum as obtained by the prior art. |
| 公开日期 | 1990-03-16 |
| 申请日期 | 1989-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87965]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IMASHIYOU YOSHIHIRO,MAKINO TOSHIHIKO,KASHIWA TORU. Semiconductor laser element. JP1990077187A. 1990-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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