Long wavelength transmitter opto-electronic integrated circuit
文献类型：专利
| 作者 | MIHASHI YUTAKA |
| 发表日期 | 1992-05-20 |
| 专利号 | CA2051453A1 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | Long wavelength transmitter opto-electronic integrated circuit |
| 英文摘要 | A long wavelength transmitter OEIC includes atransverse direction current injection type semiconductorlaser and a high electron mobility transistor which areintegrated on a semi-insulating substrate. Thesemiconductor laser includes at least an AlGaInAs lowercladding layer, a quantum well active layer and a highresistivity AlGaInAs upper cladding layer successively grownon the semi-insulating substrate, disordered regions formedin the quantum well active layer by diffusions of p type andn type dopant, and an active region sandwiched by thedisordered regions. The transistor includes an operatinglayer and a carrier supplying layer both comprising AlGaInAsseries material and formed on the high resistivity AlGaInAsupper cladding layer. This transistor uses the uppercladding layer as a leakage current preventing layer. Thisstructure can be formed by only one epitaxial growth,resulting in low costs. In addition, since the above layersare successively grown on a flat substrate, photolithographyprocess for forming a gate of HEMT can be performed on aflat surface, so that a fine gate pattern can be formed athigh precision. As a result, a transmitter OEIC performinghigh speed modulation can be expected. |
| 公开日期 | 1992-05-20 |
| 申请日期 | 1991-09-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87966]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MIHASHI YUTAKA. Long wavelength transmitter opto-electronic integrated circuit. CA2051453A1. 1992-05-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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