Semiconductor laser device
文献类型：专利
| 作者 | NAKAO ICHIRO; YOKOGAWA TOSHIYA |
| 发表日期 | 1986-10-16 |
| 专利号 | JP1986231789A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain laser beams which are emitted from a minute region and have different polarization planes whose angles are fixed by a method wherein semiconductor lasers with different polarization planes are integrated on one semiconductor substrate. CONSTITUTION:An inclination is given to an N-type InP substrate 1 by a photoetching process. In this exemplary embodiment, a vertical step is formed. After that, an InP buffer layer 2, an InGaAsP activation layer 3 and a P-type InP cladding layer 4 are formed inparallel to each other by an MOCVD method. Then the formed layers are divided into two lasers 7 and 8 by a photoetching process. As the activation layers of these lasers 7 and 8 are in parallel to the substrate surface, they are provided perpendicular to each other. Therefore, the respective polarization planes of the lasers 7 and 8 meet with each other at right angles. Thus the semiconductor lasers with different respective polarization planes can be integrated on one substrate. With this constitution, the laser beams with different respective polarization planes can be inputted into one polarization maintaining fiber so that the multipolarization plane communication can be realized. |
| 公开日期 | 1986-10-16 |
| 申请日期 | 1985-04-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87968]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NAKAO ICHIRO,YOKOGAWA TOSHIYA. Semiconductor laser device. JP1986231789A. 1986-10-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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