Manufacture of semiconductor device
文献类型：专利
| 作者 | KISHI YUTAKA; KUSUKI TOSHIHIRO |
| 发表日期 | 1982-07-07 |
| 专利号 | JP1982109327A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To remove a very small amount of organic matter by a method wherein, when a liquid-phase epitaxial growing is performed by providing a hole on a semiconductor substrate or an epitaxial crystal, the above is treated with concentrated sulfuric acid as a pre-treatment. CONSTITUTION:The substrate, whereon an SiO2 film has been removed, is cleaned with trichlene, and after methyl alcohol substituted cleaning has been performed, the above is processed with concentrated sulfuric acid. Then, when an InP layer is epitaxially grown by the second epitaxial growtn using the substrate whereon an etching was performed using the prescribed etchant, the wetting with melt is improved even for the mesa section of a four element crystal InGaAsP layer 3, and an InP layer 5 can be epitaxially grown on an InP buffer layer 2 with an excellent reproducibility. Accordingly, the yielding rate of crystal growth can be improved. |
| 公开日期 | 1982-07-07 |
| 申请日期 | 1980-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87970]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KISHI YUTAKA,KUSUKI TOSHIHIRO. Manufacture of semiconductor device. JP1982109327A. 1982-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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