Semiconductor light emitting device
文献类型：专利
| 作者 | MATSUMOTO TAKU; USUI AKIRA |
| 发表日期 | 1986-09-09 |
| 专利号 | JP1986203691A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain the semiconductor light emitting device capable of continuous oscillation at room temperature by forming an epitaxial layer of double hetero structure of In-Ga-As-P group on a GaAsP graded epitaxial wafer. CONSTITUTION:On the wafer in which a GaAs1-XPX (X:0.4) mixed crystal is grown on a GaAs bulk crystal by the graded epitaxial growth, a semiconductor laser doped with Si, S, and Se is formed as an N-InGaP clad layer. The semiconductor layer fabricated from the wafer doped with Si by using SiH4 can not offer pulse oscillation at room temperature. The laser doped with S by using H2S can offer pulse oscillation at room temperature with an oscillation threshold current density of Jth=35-60KA/cm. Meanwhile the semiconductor laser fabricated from the wafer doped with Se by using H2Se can offer pulse oscillation at room temperature with an oscillation threshold current density of Jth=3-13 KA/cm. The laser of low Jth offers the continuous oscillation at room temperature. |
| 公开日期 | 1986-09-09 |
| 申请日期 | 1985-03-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87972]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO TAKU,USUI AKIRA. Semiconductor light emitting device. JP1986203691A. 1986-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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