Semiconductor laser device
文献类型：专利
| 作者 | MIYAZAWA SEIICHI |
| 发表日期 | 1990-02-22 |
| 专利号 | JP1990052478A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To eliminated the need for ridge type machining and ease production by achieving entrapment of light in horizontal direction, having a projecting part for a ridge type structure on the surface where a base layer is formed. CONSTITUTION:A projecting part for a ridge type structure is the one where a layer constituting a semiconductor and a layer for constituting an optical waveguide of laser are formed by an epitaxial growth method as a ridge type structure, thus achieving entrapment of light of those layers in horizontal direction. With such projecting part, the shape and dimensions are not limited particularly. Then, according to the shape of the projecting part of a base 21, a buffer layer 22, a clad layer 23, an optical waveguide layer 24, a barrier layer 25, an activation layer 26, a clad 27, and an electrode contact layer 28 are formed in sequence as curved layer. Laser light of the activation layer 26 and the optical waveguide layer 25 in a laser structure part A is entrapped on an upper- surface part 46 in horizontal direction. Also, laser light carried to the optical waveguide structure part B is entrapped to an upper-surface part 47 in horizontal direction on the upper-surface part 47. |
| 公开日期 | 1990-02-22 |
| 申请日期 | 1988-08-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87988]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | MIYAZAWA SEIICHI. Semiconductor laser device. JP1990052478A. 1990-02-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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