Semiconductor laser
文献类型：专利
| 作者 | NOBUHARA HIROYUKI; WADA OSAMU |
| 发表日期 | 1987-01-21 |
| 专利号 | JP1987013090A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a sufficient photocurrent by growing a semiconductor layer on the end of a resonator of a semiconductor laser, and forming a laser light monitoring or modulating element on the layer, thereby allowing the element to effectively receive the laser light. CONSTITUTION:A P type GaAs layer 1' as a buffer layer, a P-type AlGaAs layer 2 as a laser diode layer, an undoped GaAs layer 3 as an active layer, an N-type AlGaAs layer 4, and an N type GaAs layer 4' as a contacting layer are sequentially grown on a P type GaAs substrate Part of the layer structure is etched off, the end 3A of one side of a resonator and the substrate 1 are exposed, an SiO2 or Al2O3 layer 6 are coated on the end 3B of the other side, and a high resistance AlGaAs layer 12 is coated as an insulating layer on the end 3A and the substrate A P-type superlattice layer 13A and an N-type superlattice layer 13B are grown as the semiconductor layer 13 on the layer 12. Zn is diffused in the layers 13A, 13B on the substrate 1 to form a contacting region 14, and the P-type electrode layers 8, 15 and N-type electrode layers 9, 16 of a laser diode and a photodiode are formed. |
| 公开日期 | 1987-01-21 |
| 申请日期 | 1985-07-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87991]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NOBUHARA HIROYUKI,WADA OSAMU. Semiconductor laser. JP1987013090A. 1987-01-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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