Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI; USHIJIMA ICHIROU; NAKAI SABUROU |
| 发表日期 | 1983-10-06 |
| 专利号 | JP1983170089A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain an InGaAsP/InP series buried semiconductor laser which has a low threshold current, high differentiated quantum efficiency and preferable reproducibility by forming an N type InP clad layer in the groove of an InP semiconductor substrate formed with a striped groove. CONSTITUTION:A P type InP layer 12, an N type InP layer 13 and an SiO2 layer 14 are sequentially formed on an N type InP substrate 1 A window 15 for forming a groove is formed, the substrate 11 and the layers 12, 13 are ethced to form a V-shaped groove 16. The layer 14 is removed, a heat treatment is executed in hydrogen atmosphere, and an N type InP clad layer 17 is formed on the bottom of the groove 16. A non-doped InGaAsP active layer 18 is grown on the surface of the layer 17, and an N type InP layer 13 is grown on the layer 18, and a P type InP layer 19 is formed. A P side electrode 20 made of gold/zinc and N side electrode 21 made of gold/tin are formed. |
| 公开日期 | 1983-10-06 |
| 申请日期 | 1982-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87993]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI,USHIJIMA ICHIROU,NAKAI SABUROU. Manufacture of semiconductor light emitting device. JP1983170089A. 1983-10-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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