Photoelectronic integrated element
文献类型：专利
| 作者 | TERAKADO TOMOJI |
| 发表日期 | 1987-04-27 |
| 专利号 | JP1987092386A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photoelectronic integrated element |
| 英文摘要 | PURPOSE:To lower electrostatic capacitance between electric wirings, to decrease defective wirings and to increaser working speed and improve reliability by forming a semiconductor laser and a hetero-junction bipolar transistor at approximately the same height on the same semi-insulating substrate. CONSTITUTION:A first contact layer 11, a clad layer 12, a non-doped active layer 13 and a clad layer 14 are grown on a semi-insulating InP substrate 10 in succession, and a mesa stripe 27 is shaped through etching down to the layer 1 A collector layer 15, a base layer 16, an emitter layer 17, a second contact layer 18, a P-InP buried layer 19 and a cap layer 20 are formed successively. The second liquid-phase growth functions as both the buried crystal growth of a semiconductor laser 2 and the crystal growth of a hetero-junction bipolar transistor 3. The semiconductor laser 2 and the transistor 3 are shaped onto the same substrate 10 at approximately the same height of 2mum or less. |
| 公开日期 | 1987-04-27 |
| 申请日期 | 1985-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87995]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TERAKADO TOMOJI. Photoelectronic integrated element. JP1987092386A. 1987-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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