Semiconductor laser device capable of preventing a threshold current and an operating current from increasing and manufacturing method therefor
文献类型：专利
| 作者 | TSUNODA, ATSUO |
| 发表日期 | 2005-05-12 |
| 专利号 | US20050100067A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device capable of preventing a threshold current and an operating current from increasing and manufacturing method therefor |
| 英文摘要 | A ridge section constructed of a p-type second AlGaInP clad layer 8, a p-type GaInP interlayer 9 and a p-type GaAs cap layer 10 is formed on an etching stop layer 7. A step of not smaller than 0.13 μm is formed between the p-type interlayer 9 and the p-type second clad layer 8 by making the p-type interlayer 9 protrude in both widthwise directions beyond the p-type second clad layer 8. With this step, AlInP layers can be formed separately from each other on both sides of the ridge section and on the ridge section. Therefore, when the AlInP layer on the ridge section is removed by etching, an AlInP current constriction layer 13 located on both sides of the ridge section is reliably protected by a resist film and not over-etched. The AlInP current constriction layer 13 effectively puts a current constriction function into effect, so that a semiconductor laser device of low-threshold current and low-power consumption is obtained. |
| 公开日期 | 2005-05-12 |
| 申请日期 | 2003-06-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87996]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TSUNODA, ATSUO. Semiconductor laser device capable of preventing a threshold current and an operating current from increasing and manufacturing method therefor. US20050100067A1. 2005-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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