-
文献类型：专利
| 作者 | NISHITANI YORIMITSU; KUSUKI TOSHIHIRO |
| 发表日期 | 1984-07-03 |
| 专利号 | JP1984027118B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To grow an active layer selectively at a concaved section for the subject device by a method wherein the concaved section is provided on an InP substrate and the InGaAsP, whereon the active layer will be grown, is overcooled to the temperature which is 2-5 deg.C lower than a solid-to-liquid equilibrium temperature. CONSTITUTION:A groove 2 of 0.1-0.4mum in depth and 2-5mum in widt is formed on the surface (100) of the N type InP substrate 1, an N type InP buffer layer 3 is superposed and a new groove is formed, and an InGaAsP active layer 4 is grown in a liquid phase. At this time, when the overcooling temperature of the InGaAsP is lower than 2 deg.C, there will be no growth in solid-state phase and there will be growth on the flat section if the temperature is higher than 5 deg.C. Also, if the groove is shallower than 1mum in depth and narrower than 2mum in width, the shoulder of the substrate is exposed and in the case when the width exceeds 5mum, the groove is flattened. A P type InP clad layer 5, a P type InGaAsP connecting layer 6 and an insulating film 7 are superposed on the active layer 4 and then electrodes 8 and 9 are attached. According to this constitution, the active layer can be buried easily and accurately without performing complicated processes. |
| 公开日期 | 1984-07-03 |
| 申请日期 | 1980-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87997]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NISHITANI YORIMITSU,KUSUKI TOSHIHIRO. -. JP1984027118B2. 1984-07-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。