Manufacture of mesa buried type optical semiconductor device
文献类型：专利
| 作者 | OKAZAKI JIRO |
| 发表日期 | 1991-11-08 |
| 专利号 | JP1991250684A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of mesa buried type optical semiconductor device |
| 英文摘要 | PURPOSE:To prevent abnormal growth and vacancies from being produced by constructing a first stage mesa part with part of an InP substrate and a second stage mesa part with an active layer, a cladding layer, and a contact layer, respectively, and performing a burying processing after the stepped mesa part is formed. CONSTITUTION:There is formed on an InP substrate, e.g. on an n-type InP substrate 11 a double heterostructure where an InGaAsP layer, e.g. an InGaAsP active layer 12 or an InGaAs layer is held between an InP layer, e.g. an n-type InP substrate 11 and a p-type InP cladding layer 13. Then, a plurality of stage of a mesa are formed which mesa extends to part of the InP substrate from the surface and includes its uppermost stage on the surface being shaped perpendicular to the InP substrate or shaped into an inverted mesa and which mesa becomes wider as it goes to lower stages. Further, the plurality of stage mesa is buried with the InP layer using an organic metal vapor phase growth process. Hereby, a buried layer comprising InP is prevented from producing abnormal growth and vacancies therein, and hence the fear is eliminated where an electrode material enters to produce any leakage. |
| 公开日期 | 1991-11-08 |
| 申请日期 | 1990-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87999]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | OKAZAKI JIRO. Manufacture of mesa buried type optical semiconductor device. JP1991250684A. 1991-11-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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