Semiconductor laser
文献类型：专利
| 作者 | KASUKAWA AKIHIKO; KASHIWA SUSUMU |
| 发表日期 | 1988-04-04 |
| 专利号 | JP1988073682A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To be able to perform a low threshold current and a basic lateral mode operation thereby to control the width of an active layer narrowly by providing the active layer laminated on a clad layer, and a second conductivity type clad layer formed on the active layer to cover the active layer and to block a groove. CONSTITUTION:A striped groove 13 which arrives at the surface of a semiconductor substrate 10 is formed by inserting current blocking layers 11, 12 at predetermined regions of the layers 11, 12. A clad layer 14 made of an n-type InP is formed on the substrate 10 and the layer 12 exposed by the groove 13, and an active layer 15 made of nondoped GaInAsP (lambdag=3mum) is formed. The surface of the layer 15 in the groove 13 is recessed. A clad layer 16 made of a p-type InP is formed to bury the groove 13 on the layer 15, and a cap layer 17 made of p-type GaInAsP (lambdag=l.3mum) is formed on the layer 16. These layers 17, 16, 14 and 15 are continuously formed by twice crystal growths. |
| 公开日期 | 1988-04-04 |
| 申请日期 | 1986-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88002]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | KASUKAWA AKIHIKO,KASHIWA SUSUMU. Semiconductor laser. JP1988073682A. 1988-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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