Semiconductor laser
文献类型：专利
| 作者 | HANAMITSU KIYOSHI |
| 发表日期 | 1985-02-21 |
| 专利号 | JP1985034087A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain excellent effects in a change into low threshold currents, astigmatism, etc. by each forming a gain confinement type waveguide selectively in the axial direction of a resonator and an index confinement type waveguide to a residual section communicated with said waveguide. CONSTITUTION:In a GaAs/GaAlAs group semiconductor laser, a gain confinement type waveguide section 8A is formed so that a P type conversion region 7 does not penetrate an N type Ga1-xAlxAs active layer 3. The region 7 penetrates the layer 3 in an index confinement type waveguide section 8B. Consequently, P-N junctions are formed in arrow 7A and 7B sections. According to such structure, an advantage at a time when the structure of a resonator is formed to a complate gain confinement type or a complete index confinement type can be kept at a level in a certain extent. As a result, practically sufficient performance can be displayed in the points of astigmatism, threshold currents, noise strain characteristics by modal noises, etc. |
| 公开日期 | 1985-02-21 |
| 申请日期 | 1983-08-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88011]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | HANAMITSU KIYOSHI. Semiconductor laser. JP1985034087A. 1985-02-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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