Semiconductor optical amplifier device
文献类型：专利
| 作者 | TSUJI SHINJI; AIKI KUNIO |
| 发表日期 | 1991-04-22 |
| 专利号 | JP1991096928A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical amplifier device |
| 英文摘要 | PURPOSE:To obtain an optical amplifier device which operates with high output by setting the reflection factor of each waveguide end to less than a specific percentage, increasing injected carrier density from an input end to an output end, and increasing the carrier density of the optical amplifying device toward the output side. CONSTITUTION:When the reflection factor of each waveguide end is <=1%, the injected carrier density dependency of a gain spectrum increases in the injected carrier density and the wavelength lambdap at which the gain by band filling becomes maximum shifts to the short-wavelength side. When incident light is denoted as lambdain, the relative wavelength difference DELTAlambda=lambdain-lambdap from lambdap increases as the injected carrier density nc is increased. Then, the gain saturation coefficient is decreased as DELTAlambda increases. Namely, the least saturation is obtained when the carrier density is maximum, so high output is expected. For the purpose, the injection density is made small on the light input side where the light intensity is low and increased toward the output end where the light is intense to generate a light output which is saturated in gain by using an optical amplifier 11, a diffraction grating 12, and a power meter 13. Therefore, the optical amplifier device which outputs with high output is obtained. |
| 公开日期 | 1991-04-22 |
| 申请日期 | 1989-09-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88023]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TSUJI SHINJI,AIKI KUNIO. Semiconductor optical amplifier device. JP1991096928A. 1991-04-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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