Integrated semiconductor laser device
文献类型：专利
| 作者 | KIMURA TADASHI |
| 发表日期 | 1990-06-11 |
| 专利号 | JP1990151092A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated semiconductor laser device |
| 英文摘要 | PURPOSE:To stabilize oscillation mode, and obtain a laser device of high efficiency by arranging semiinsulative current blocking layers of InP which are buried and formed between individual laser elements by MOCVD method and doped with Fe. CONSTITUTION:Semiinsulative current blocking layers which are buried and formed between individual laser element by MOCVD method are installed. Current injected from a P-type electrode 1 of each laser element passes a P-type InP clad layer 3 just under the electrode, and induces laser oscillation in an active layer 6. This phenomenon generates in all laser elements formed on the substrate. Each of the elements is electrically isolated by semiinsulative InP layers 4 doped with Fe. Thereby it can be prevented that the current injected from the P-type electrode 1 flows into the adjacent active region 5, and abnormal oscillation modes generate as the result of mutual interference. |
| 公开日期 | 1990-06-11 |
| 申请日期 | 1988-12-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88027]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KIMURA TADASHI. Integrated semiconductor laser device. JP1990151092A. 1990-06-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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