Semiconductor laser device
文献类型：专利
| 作者 | TAMURA HIDEO |
| 发表日期 | 1986-06-12 |
| 专利号 | JP1986125184A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To inhibit the mode hopping noises and reflected noises of a semiconductor laser device by forming a clad layer with a striped projecting section onto an active layer and shaping an optical absorption combining current stopping layer with an opening in response to the projecting section. CONSTITUTION:A first clad layer 4 and an active layer 6 are formed onto a semiconductor substrate 2. A clad layer 8 is shaped onto the active layer 6. The clad layer 8 has a striped projecting section 10. An optical absorption combining current stopping layer 12 with an opening 14 is formed onto the clad layer 8. The opening 14 is made narrower than the width of the projecting section 10. A contact layer 16 is shaped on to the layer 12. According to the structure, gain distribution 20 occupies the narrow one part of an optical extent region 22 because the extent 18 of a current streamline is made narrower than the extent of the projecting section 10. Regions II are given the function of a saturable absorber, and a semiconductor laser is easy to generate half-excited oscillation, thus obtaining a stable longitudinal multimode. |
| 公开日期 | 1986-06-12 |
| 申请日期 | 1984-11-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88029]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | TAMURA HIDEO. Semiconductor laser device. JP1986125184A. 1986-06-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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