Semiconductor laser
文献类型：专利
| 作者 | IMAMURA YOSHIHIRO; ITAYA YOSHIO; OISHI MAMORU |
| 发表日期 | 1988-09-19 |
| 专利号 | JP1988224382A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a grown film having excellent crystal quality by providing a periodic crystal composition having refractive index smaller than that of a waveguide and larger than that of a semiconductor layer at a junction of the waveguide and the layer to flatten the junction between the waveguide and the layer. CONSTITUTION:In a semiconductor laser having an integral waveguide, a periodic crystal composition having a refractive index smaller than that of a waveguide and larger than that of a semiconductor layer is provided at a junction between the waveguide and the layer. That is, an optical guide layer 2 and an active layer 3 having a composition of the wavelength longer than that of the layer 2 are formed on an N-type substrate 1 formed of InP, and a P-type clad layer 4 formed of InP, a P-type 4-element cap layer 5, and an AuZnNi electrode layer 6 are sequentially laminated. An arsenic (As) concentration is locally enhanced on the surface of the substrate Thus, the junction between the waveguide 2 and the layer 1 is flattened. |
| 公开日期 | 1988-09-19 |
| 申请日期 | 1987-03-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88034]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | IMAMURA YOSHIHIRO,ITAYA YOSHIO,OISHI MAMORU. Semiconductor laser. JP1988224382A. 1988-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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