Semiconductor laser
文献类型：专利
| 作者 | HIRANO RIYOUICHI; NAMISAKI HIROBUMI; SUZAKI WATARU |
| 发表日期 | 1983-12-27 |
| 专利号 | JP1983225683A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the laser having excellent oscillation made characteristics by a method wherein a V-groove is formed on an InP substrate, and an InGaAsP layer is epitaxially grown in such a manner that it is astriding the groove while it is being contacted to the top part of the groove, thereby enabling to oscillate at a low threshold current. CONSTITUTION:A V-groove 2 is cut in the center part on the surface of the InP substrate 1 having the surface (100), an InP layer 7 is epitaxially grown on the bottom face of said groove 2 and, at the same time, a grown layer 8 is generated on the flat part 1a on the surface of the substrate Then, for the purpose of filling up the V-groove 2, an InGaAsP layer 11 is grown on the whole surface including the groove 2, said layer 11 is contacted to the upper parts 2a and 2b of the V-groove 2, and above is brought into the state wherein the layer is astriding the groove. Subsequently, an InP layer 12 is epitaxially grown on the layer 11, and the entire surface is flattened by removing the stepping located between the internal part and the external part of the V-groove 2. |
| 公开日期 | 1983-12-27 |
| 申请日期 | 1982-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88041]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HIRANO RIYOUICHI,NAMISAKI HIROBUMI,SUZAKI WATARU. Semiconductor laser. JP1983225683A. 1983-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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