Buried heterostructure
文献类型：专利
| 作者 | ÖHLANDER, ULF; RASK, MICHAEL; STOLTZ, BJÖRN |
| 发表日期 | 1997-09-04 |
| 专利号 | WO1997032377A1 |
| 著作权人 | TELEFONAKTIEBOLAGET LM ERICSSON (PUBL) |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried heterostructure |
| 英文摘要 | An epitaxially grown semiconductor heterostructure has an inner region (5) which is substantially laterally confined by confinement regions (9) and has enhanced transverse confinement by enhanced transverse confinement layers (3, 7). The latter layers are not exposed outside the growth chamber during processing, by stopping the etching for producing the lateral confinement, above the lower enhanced transverse confinement layer (3) and growing such an upper layer (7) after making the lateral confinement regions (9). The structure is intended to be used in particular having the inner region act as an active laser region, for instance in InP-based 3 mu m wavelength lasers. Then the simultaneous lateral confinement, enhanced transverse confinement and exposure protection enables simultaneously a low threshold current, a small temperature sensitivity and reliable, long life operation. The enhanced transverse confinement layers (3, 7) could comprise aluminium protected from oxidation during processing. Such a laser will then be protected from a declined reliability. |
| 公开日期 | 1997-09-04 |
| 申请日期 | 1997-02-25 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88042]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TELEFONAKTIEBOLAGET LM ERICSSON (PUBL) |
| 推荐引用方式 GB/T 7714 | ÖHLANDER, ULF,RASK, MICHAEL,STOLTZ, BJÖRN. Buried heterostructure. WO1997032377A1. 1997-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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