Multi-wavelength integrated semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | SEKIGUCHI YOSHINOBU |
| 发表日期 | 1990-02-14 |
| 专利号 | JP1990043788A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multi-wavelength integrated semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a laser device whose active layers are uniform in the laser characteristic and which is long in a life span without imposing any restriction on the material and the composition of the active layers by a method wherein two or more kinds of active layers, which oscillate light rays different from each other, are laminated, and impurity is diffused to the place near the active layers. CONSTITUTION:Two or more kinds of active layers 41-43, which oscillate light rays whose wavelengths are different from each other, are laminated, and then impurity is diffused so as to reach to the active layers 41-43 or the position near them for the formation of carrier injection regions 103, 203 and 303 to enable the layers 41-43 to be driven independently from each other. For instance, an n-type GaAs buffer layer 6 and an n-type first clad layer 5 are formed on an n-type GaAs substrate 7, and n-type barrier layers 34, 33, 32 and 31 and the n-type or undoped active layers 43, 42 and 41 whose oscillating light rays are different from each other in wavelength, are alternately formed in succession thereon. Next, Be is injected in stripes to form the p regions 303, 202 and 103 corresponding to the active layers 43, 42 and 41 respectively. Then, a high resistance second clad layer 2 and a high resistance cap layer 1 are formed, and Zn is diffused in stripes to form the p regions 302, 202 and 102. |
| 公开日期 | 1990-02-14 |
| 申请日期 | 1988-08-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88044]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | SEKIGUCHI YOSHINOBU. Multi-wavelength integrated semiconductor laser device and manufacture thereof. JP1990043788A. 1990-02-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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