Manufacture of semiconductor laser device
文献类型：专利
| 作者 | YOSHIKAWA AKIO; KAZUMURA MASARU |
| 发表日期 | 1985-12-20 |
| 专利号 | JP1985258986A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the titled device of single lateral mode oscillation at low threshold values by a method wherein a multilayer thin film including a double hetero structure is formed by the liquid phase epitaxial method after a thin film layer showing reverse conductivity type to that of a substrate is formed on the surface of the conductive substrate having a stepwise difference by ion implantation and then partly removed. CONSTITUTION:A photo resist film 22 is left on the surface in the upper part of the stepwise difference by coating the surface 20 with photo resist. The surface 21 is exposed by etching with an H2SO4 series etchant. This can form the part without an N-type GaAs layer 11 at the slope of the stepwise difference. Thereafter, the substrate surface is cleanned by removing the photo resist film 22; then, crystal growth is carried out by LPE. After etching treatment, a P-type Ga1-xAlxAs clad layer 12, a Ga1-yAlyAs active layer 13, an N-type Ga1-xAlxAs clad layer 14, and an N-type GaAs layer 15 are formed on the surface 21, so that the growing surface may become flat. When current is passed after preparation of electrodes on both the P-type GaAs substrate 10 and the N-type GaAs 15, the current is injected from the substrate 10 to the P-type Ga1-xAlxAs layer 12 with a width W, resulting in the realiztion of current stricture. |
| 公开日期 | 1985-12-20 |
| 申请日期 | 1984-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88047]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA AKIO,KAZUMURA MASARU. Manufacture of semiconductor laser device. JP1985258986A. 1985-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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