Edge emission type optical semiconductor device
文献类型：专利
| 作者 | NOGUCHI HIDEAKI |
| 发表日期 | 1988-09-21 |
| 专利号 | JP1988226978A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Edge emission type optical semiconductor device |
| 英文摘要 | PURPOSE:To make it easily realizable to couple this device with an optical fiber, by forming a second groove, which is positioned on an extension line of a striped luminous region and in which the optical fiber is inserted to be made fixable, on an optical fiber fixing part which is partitioned off from a luminous part by this groove. CONSTITUTION:A first clad layer 2, an active layer 3, a second clad layer 4, a cap layer 5, and the like are laminated on a semiconductor substrate 1, and a striped luminous region 9 is formed by burial crystal growth. A first groove 10, which is perpendicular to the striped luminous region 9 and deep enough to attain to the first clad layer 2, in such an edge emission type optical semiconductor device, so that a luminous part 15 and an optical fiber fixing part 14 are partitioned off. A second groove 11, which is positioned on an extension line of the striped luminous region 9 and in which the optical fiber is inserted to make fixable, is formed on the optical fiber fixing part 14. For example, the second groove 11 is formed equivalently to a clad diameter of the fixed optical fiber 12, and it is formed deeply so that a core part 16 of the optical fiber 12 is disposed on an optical axis extension line of the active layer 3. |
| 公开日期 | 1988-09-21 |
| 申请日期 | 1987-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88051]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NOGUCHI HIDEAKI. Edge emission type optical semiconductor device. JP1988226978A. 1988-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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