Semiconductor laser device
文献类型：专利
| 作者 | NISHIMOTO HIROYUKI |
| 发表日期 | 1990-11-30 |
| 专利号 | JP1990291188A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the high-frequency characteristics of a semiconductor laser by a method wherein the part other than the vicinity of the luminous region of the laser is covered with a high-resistance semiconductor layer and at the same time, an active layer is formed into a buried structure. CONSTITUTION:Almost half of an N-type InP semi-insulative substrate 1 with an InP high-resistance layer 9 laminated on it is etched using a silicon nitride film 11 as a mask. Then, an n-type InP buffer layer 2, an InGaAsP active layer 3, a p-type InP clad layer 4 and a p-type InGaAsP contact layer 5 are formed in order on the stepped base of the surface of an inverse mesa using the film 11 as a mask by an MOCVD device. Then, after the film 11 is removed using a buffered hydrofluoric acid, a silicon nitride film 12 is anew formed and a switching is performed until the layer 2 is exposed using this film 12 as a mask. Then, after the layer 3 is selectively etched using a sulfuric acid etchant, an n-type InP mass transport buried layer 20 is formed. After the film 12 is removed using a buffered hydrofluoric acid, a p side electrode 7 is deposited. Moreover, an n side electrode 8 is formed on the side of the substrate Thereby, a signal current is almost all fed to the layer 3 up to its high-frequency band and a semiconductor laser having superior high-frequency characteristics is obtained. |
| 公开日期 | 1990-11-30 |
| 申请日期 | 1989-05-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88055]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NISHIMOTO HIROYUKI. Semiconductor laser device. JP1990291188A. 1990-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。