Optoelectronic integrated circuit and manufacture thereof
文献类型：专利
| 作者 | TSUJII HIRAAKI; ONAKA SEIJI; SHIBATA ATSUSHI |
| 发表日期 | 1990-02-06 |
| 专利号 | JP1990036584A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optoelectronic integrated circuit and manufacture thereof |
| 英文摘要 | PURPOSE:To make an amplification factor uniform, a high speed operation possible, and a leakage current of a laser small by a method wherein a laser double hetero- function is so formed as to make a crescent-shaped active layer placed at a position of a high resistance layer inside a laser stripe groove formed on a semiconductor substrate in such a manner that it reaches the semiconductor substrate provided with the high resistance layer on its surface. CONSTITUTION:A collector layer 103, a base layer 104, and an emitter layer 105, which compose a transistor, can be formed on a wafer which is in a uniform or a comparatively uniform state that only a laser stripe groove is provided, by using a high resistance layer 102 as an isolating layer of each transistor, so that each layer is improved in uniformity and the transistors are made uniform in characteristic. A laser section is structured in such a manner that a p-type clad layer 121, an active layer 122, and an n-type clad layer 123 are successively formed in the laser stripe groove to form a double hetero-junction. In this process, the active layer 122 becomes crescent-shaped inside the groove and capable of trapping light rays efficiently. The crescent-shaped active layer is positioned inside the high resistance layer, whereby a leakage current can be made small. |
| 公开日期 | 1990-02-06 |
| 申请日期 | 1988-07-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88056]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSUJII HIRAAKI,ONAKA SEIJI,SHIBATA ATSUSHI. Optoelectronic integrated circuit and manufacture thereof. JP1990036584A. 1990-02-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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