Semiconductor laser
文献类型：专利
| 作者 | ISHIKURA TAKURO |
| 发表日期 | 1988-03-30 |
| 专利号 | JP1988070587A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To grow a third clad layer easily on the upper surface of a clad layer exposed to a current constriction layer, and to improve yield and reliability by constituting a second clad layer of two or more of layers having different Al composition ratios and making the Al composition ratio of a layer on the current constriction layer side smaller than that of a layer having the maximum Al composition ratio and larger than that of an active layer. CONSTITUTION:An N-type clad layer 2, an active layer 3, a lower clad layer 4a, an upper clad layer 4b and an N-type GaAs current constriction layer 5 (thickness t=1mum) are grown on an N-type GaAs substrate 1 in the order. The current constriction layer 5 is etched to a striped shape to expose the P-type clad layer 4b, a third clad layer 6 is grown on the layer 4b, and lastly a GaAsP type cap layer 7 is grown. When the third clad layer 6 is grown again, the surface oxidation of the upper clad layer 4b exposed to the striped shape is prevented, thus obviating the increase of threshold currents due to the irregular reflection of beams and the rise of driving voltage due to high resistance. The upper clad layer 4b is oxidized remarkably with the elevation of an Al composition ratio, but the Al composition ratio can be reduced in the case of the structure, thus improving the generation of oxidation. |
| 公开日期 | 1988-03-30 |
| 申请日期 | 1986-09-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88058]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | ISHIKURA TAKURO. Semiconductor laser. JP1988070587A. 1988-03-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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