中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optical semiconductor device

文献类型:专利

作者CHINEN YUKIO
发表日期1988-02-03
专利号JP1988025991A
著作权人TOSHIBA CORP
国家日本
文献子类发明申请
其他题名Optical semiconductor device
英文摘要PURPOSE:To provide an optical semiconductor device characterized by a low resistance and high-speed operation, by burying both side surfaces of stripe layers, in which an InGaAsP layer is held by InP clad layers, with InP layers having two different conductivity types, and growing an InGaAs or InGaAsP ohmic layer on the InP clad layer and the InP embedded layer. CONSTITUTION:On an N type InP semiconductor substrate 1, an N type InP clad layer 9 is grown. An InGaAsP active layer 2 is grown on the clad layer 9. A P type InP clad layer 3 is grown on the active layer 2. After embedded layers 4 and 5 are grown, an SiO2 film is removed by a chemical etching treatment. Thereafter, an ohmic layer 6 having the composition of InGaAs is grown on the P type InP clad layer 3 and the N type InP embedded layer 5. Then, ohmic electrodes 7 and 8, which depend on the respective conductivity types, are formed on the substrate 1 and the ohmic layer 6. By making InGaAs to be the ohmic layer 6, a lower resistance layer can be formed with high concentration carriers. The band gap can be made small. The resistance of the laser diode can be made small. As a result, high-speed modulation can be carried out at a basic mode.
公开日期1988-02-03
申请日期1986-07-18
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/88062]  
专题半导体激光器专利数据库
作者单位TOSHIBA CORP
推荐引用方式
GB/T 7714
CHINEN YUKIO. Optical semiconductor device. JP1988025991A. 1988-02-03.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。