Optical semiconductor device
文献类型:专利
作者 | CHINEN YUKIO |
发表日期 | 1988-02-03 |
专利号 | JP1988025991A |
著作权人 | TOSHIBA CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Optical semiconductor device |
英文摘要 | PURPOSE:To provide an optical semiconductor device characterized by a low resistance and high-speed operation, by burying both side surfaces of stripe layers, in which an InGaAsP layer is held by InP clad layers, with InP layers having two different conductivity types, and growing an InGaAs or InGaAsP ohmic layer on the InP clad layer and the InP embedded layer. CONSTITUTION:On an N type InP semiconductor substrate 1, an N type InP clad layer 9 is grown. An InGaAsP active layer 2 is grown on the clad layer 9. A P type InP clad layer 3 is grown on the active layer 2. After embedded layers 4 and 5 are grown, an SiO2 film is removed by a chemical etching treatment. Thereafter, an ohmic layer 6 having the composition of InGaAs is grown on the P type InP clad layer 3 and the N type InP embedded layer 5. Then, ohmic electrodes 7 and 8, which depend on the respective conductivity types, are formed on the substrate 1 and the ohmic layer 6. By making InGaAs to be the ohmic layer 6, a lower resistance layer can be formed with high concentration carriers. The band gap can be made small. The resistance of the laser diode can be made small. As a result, high-speed modulation can be carried out at a basic mode. |
公开日期 | 1988-02-03 |
申请日期 | 1986-07-18 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/88062] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | TOSHIBA CORP |
推荐引用方式 GB/T 7714 | CHINEN YUKIO. Optical semiconductor device. JP1988025991A. 1988-02-03. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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