Semiconductor device, manufacture thereof and laser device
文献类型：专利
| 作者 | MOCHIZUKI KAZUHIRO; GOSHIMA SHIGEO; IHARA AYAKO; KAKIBAYASHI HIROSHI; TAGAMI TOMONORI; KAWADA MASAHIKO; KUSANO CHUSHIRO; MITANI KATSUHIKO; MASUDA HIROSHI |
| 发表日期 | 1991-04-08 |
| 专利号 | JP1991082115A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device, manufacture thereof and laser device |
| 英文摘要 | PURPOSE:To suppress the shifting of impurity atoms by a method wherein a single crystal substrate is formed in such a manner that it has the surface which is inclined at the desired angle from a low exponential surface. CONSTITUTION:In addition to surface segregation, thermal diffusion is considered in the moving mechanism while impurity atoms are being epitaxially grown. The thermal diffusion has no off-angle dependency on a substrate. For example, in the case of Be-doped Al0.3Ga0.7As grown on a GaAs substrate 1 having the surface inclined in [011] direction from (100) face 2, the amount of movement to the surface side of Be is determined by surface segregation and thermal diffusion. As an off-angle becomes larger, the amount of movement of Be due to surface segregation is decreased, and the amount of movement of Be by thermal diffusion is increased. Accordingly, the amount of movement of Be hardly decreases even the off-angle is made larger by about 10 degrees. Besides, as the impurity atoms to the substrate side are moved by thermal diffusion only, the substrate does not depend on off-angle. |
| 公开日期 | 1991-04-08 |
| 申请日期 | 1989-08-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88076]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MOCHIZUKI KAZUHIRO,GOSHIMA SHIGEO,IHARA AYAKO,et al. Semiconductor device, manufacture thereof and laser device. JP1991082115A. 1991-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。