Light modulator and photodetector
文献类型:专利
作者 | KOMATSU YOSHIRO; YAMAGUCHI MASAYUKI; AJISAWA AKIRA; TERAKADO TOMOJI |
发表日期 | 1991-10-04 |
专利号 | JP1991225320A |
著作权人 | 日本電気株式会社 |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Light modulator and photodetector |
英文摘要 | PURPOSE:To reduce the volume of a device, to enable ultrahigh-speed modulation and to widen the band of a light modulator and that of a photodetector by using a high resistance substrate and embedding a light guide having PIN structure with a high resistance layer. CONSTITUTION:Mesa stripes are formed on a high resistance InP substrate 1 by laminating a clad layer 2 of n-InP, a light absorbing layer 3 of i-InGaAsP, a clad layer 4 of p-InP and a cap layer 5 of p-InGaAs. One side of the mesa stripes is embedded with a high resistance block layer 6 and high resistance is rendered with a proton implanted region 7. An ion implanted region 8 is formed at the other side of the mesa stripes and an n-side electrode 10 and a p-side electrode 9 are formed on the regions 8, 7, respectively. By this structure, the interval between the electrodes is regulated to about 100 mum, the volume of the resulting device is reduced to 1/10-1/30 of the conventional volume and ultrahigh-speed light modulation and a widened band are attained. |
公开日期 | 1991-10-04 |
申请日期 | 1990-01-31 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/88082] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 日本電気株式会社 |
推荐引用方式 GB/T 7714 | KOMATSU YOSHIRO,YAMAGUCHI MASAYUKI,AJISAWA AKIRA,et al. Light modulator and photodetector. JP1991225320A. 1991-10-04. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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