中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Light modulator and photodetector

文献类型:专利

作者KOMATSU YOSHIRO; YAMAGUCHI MASAYUKI; AJISAWA AKIRA; TERAKADO TOMOJI
发表日期1991-10-04
专利号JP1991225320A
著作权人日本電気株式会社
国家日本
文献子类发明申请
其他题名Light modulator and photodetector
英文摘要PURPOSE:To reduce the volume of a device, to enable ultrahigh-speed modulation and to widen the band of a light modulator and that of a photodetector by using a high resistance substrate and embedding a light guide having PIN structure with a high resistance layer. CONSTITUTION:Mesa stripes are formed on a high resistance InP substrate 1 by laminating a clad layer 2 of n-InP, a light absorbing layer 3 of i-InGaAsP, a clad layer 4 of p-InP and a cap layer 5 of p-InGaAs. One side of the mesa stripes is embedded with a high resistance block layer 6 and high resistance is rendered with a proton implanted region 7. An ion implanted region 8 is formed at the other side of the mesa stripes and an n-side electrode 10 and a p-side electrode 9 are formed on the regions 8, 7, respectively. By this structure, the interval between the electrodes is regulated to about 100 mum, the volume of the resulting device is reduced to 1/10-1/30 of the conventional volume and ultrahigh-speed light modulation and a widened band are attained.
公开日期1991-10-04
申请日期1990-01-31
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/88082]  
专题半导体激光器专利数据库
作者单位日本電気株式会社
推荐引用方式
GB/T 7714
KOMATSU YOSHIRO,YAMAGUCHI MASAYUKI,AJISAWA AKIRA,et al. Light modulator and photodetector. JP1991225320A. 1991-10-04.

入库方式: OAI收割

来源:西安光学精密机械研究所

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