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文献类型：专利
| 作者 | HASEGAWA OSAMU; YANO KENJI; KANEDA KOICHI |
| 发表日期 | 1986-09-01 |
| 专利号 | JP1986038873B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | Disclosed is a semiconductor light-emitting device comprising a semiconductor substrate of GaAs (21) and a crystal layer of Ga1-xAlxAs (22) formed by epitaxial growth on the semiconductor substrate. The x value in the crystal layer is gradually decreased, and therefore the refractive index is increased, in accordance with the development of the epitaxial growth. A light ray emitted from a light-emitting portion in the crystal layer under the reflector (25) is bent in accordance with the distribution of the x value, so that the light ray can reach a light-emitting surface (28) of the crystal layer. Preferably, a groove is provided on the surface of the semiconductor substrate (21) so that successively grown layers of the crystal follow the shape of the groove and cause the light-launching efficiency of the LED to be increased still further. The groove may be termin ated in a curved shape near the rear side surface opposite the light-launching surface, and there may be an additional reflector on the rear side surface. |
| 公开日期 | 1986-09-01 |
| 申请日期 | 1979-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88089]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | HASEGAWA OSAMU,YANO KENJI,KANEDA KOICHI. -. JP1986038873B2. 1986-09-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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