中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Distributed feedback type semiconductor laser

文献类型:专利

作者SAKAI KAZUO; NODA YUKIO; MATSUSHIMA HIROICHI; KUSHIRO YUKITOSHI; UKOU KATSUYUKI
发表日期1983-01-21
专利号JP1983010882A
著作权人KOKUSAI DENSHIN DENWA KK
国家日本
文献子类发明申请
其他题名Distributed feedback type semiconductor laser
英文摘要PURPOSE:To obtain stable single longitudinal mode oscillation, by the constitution wherein an optical waveguide is intersected with light emitting surfaces at an angle other than a right angle, and suppressing the oscillation in a Fabry- Perot resonating mode. CONSTITUTION:Grooves are formed in an N type InP substrate 11 in a stripe shape. On one surface of both sides of the groove, a diffraction grating made of periodic concave and convex parts is formed so as to cross the direction of the groove at a right angle. On said grating, an N type layer 12, a nondoped P1-z layer 13, a P type layer 14, a P type InP layer 15, and an SiO2 film 16 are provided. Said layers are held between metal electrodes 17 and 18. In this laser, the grooves formed on the substrate and the waveguide 19 are intersected with the light emitting surface 20 and 21 at an angle other than the right angle. In this constitution, the oscillation threshold value in the Fabry-Perot resonating mode is increased, and the operation in the Fabry-Perot resonating mode when the operation is performed in the distributed feedback oscillating mode can be suppressed.
公开日期1983-01-21
申请日期1981-07-14
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/88090]  
专题半导体激光器专利数据库
作者单位KOKUSAI DENSHIN DENWA KK
推荐引用方式
GB/T 7714
SAKAI KAZUO,NODA YUKIO,MATSUSHIMA HIROICHI,et al. Distributed feedback type semiconductor laser. JP1983010882A. 1983-01-21.

入库方式: OAI收割

来源:西安光学精密机械研究所

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