Semiconductor laser device
文献类型：专利
| 作者 | WATANABE NOZOMI; HASHIMOTO AKIHIRO; USHIKUBO TAKASHI |
| 发表日期 | 1988-12-14 |
| 专利号 | JP1988306686A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a high output by disordering part of an active layer multiplex quantum well structure formed by altering the thickness of a barrier layer to form a region having a convex lens effect perpendicularly to a substrate surface near a laser light irradiating end face. CONSTITUTION:A P-type AlxGa1-xAs (x=0.45) clad layer 12, an active layer 13, an N-type AlxGa1-xAs (x=0.45) clad layer 14, an N-type GaAs layer 15 for obtaining an ohmic contact are sequentially formed on a P-type GaAs substrate 1 The layer 13 is formed in a multiplex quantum structure in which many GaAs well layers 16 and many AlxGa1-xAs (x=0.3) barrier layers 7 are alternately laminated. Then, a Zn diffused layer 18 is formed on the rear section of the laser light radiating end face from the layer 15 to the layers 14, 12. An insulating film 19 is formed on the layer 15, and an N-type electrode 20 is further formed by ohmic contact. On the other hand, a P-type electrode 21 is formed on the rear of the substrate 1 |
| 公开日期 | 1988-12-14 |
| 申请日期 | 1987-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88093]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | WATANABE NOZOMI,HASHIMOTO AKIHIRO,USHIKUBO TAKASHI. Semiconductor laser device. JP1988306686A. 1988-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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