Manufacture of semiconductor laser
文献类型：专利
| 作者 | ONOUCHI TOSHIHIKO; NOJIRI HIDEAKI |
| 发表日期 | 1991-05-28 |
| 专利号 | JP1991125489A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To provide a high-efficiency semiconductor laser while improving production efficiency and device reliability by a method in which semiconductor GaAs is formed in stripes on a wafer and the wafer is subjected to two steps of liquid phase epitaxy. CONSTITUTION:A mask layer is etched with HCl and H2O2 to form a strip of mask 20. A cap layer 15 is exposed where the mask layer has been removed. The cap layer and Ga malt at a degree of saturation T=-5 deg.C are brought into contact by liquid phase epitaxy at 800 deg.C so as to melt the other portions dow by 3mum than under the mask 20. The etched mask has a side angle 60 deg.C irrespective of surface orientation. Two kinds of Ga melts at a degree of super saturation ALPHAT=5 deg.C are applied for recrystallization of a p-type buried AlGaAs layer 16 and a n-type AlGaAs layer 17. When the proportion of aluminum in the mixed crystal is 0.3, the interfaces with the buried layers are at the same level as the active layer under the conditions of the growth time of 22 seconds and 4 minutes for layers 16 and 17, respectively. |
| 公开日期 | 1991-05-28 |
| 申请日期 | 1989-10-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88106]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | ONOUCHI TOSHIHIKO,NOJIRI HIDEAKI. Manufacture of semiconductor laser. JP1991125489A. 1991-05-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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