Semiconductor optical negative feedback amplifier
文献类型：专利
| 作者 | YAMADA HIROHITO |
| 发表日期 | 1991-03-07 |
| 专利号 | JP1991053579A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical negative feedback amplifier |
| 英文摘要 | PURPOSE:To improve the amplification of optical signals in SN ratio when the optical signals whose wavelength is close to a gain peak wavelength are amplified by a method wherein a ring-shaped semiconductor waveguide which has a gain is provided to a semiconductor substrate, and the length of the optical path of the semiconductor path is a multiple of an odd number by half of the gain peak wavelength of the waveguide. CONSTITUTION:Ring-shaped optical waveguides 14 and 15 possessed of an optical gain which satisfies formula (1) are formed on a semiconductor substrate 11, where L, n, and lambda in the formula (1) denote the length of an optical waveguide, refractive index inside the waveguide, and the gain peak wavelength of the waveguide respectively. The manufacturing process concerned is such that an N-InP clad layer, a non-doped InGaAs active layer, a P-InP clad layer, and a InGaAsP cap layer are successively grown on a substrate to form a DH wafer. Then, a P-side electrode is evaporated on the whole face of the wafer through sputtering. An SiO2 mask of a 8-shaped pattern 60mum or so in length of optical path is formed on the P-side electrode. The P-side electrode is removed through a wet etching method so as to leave the part unremoved where the 8-shaped pattern has formed, and then the growth layer is etched so deep as to reach to the substrate through a dry etching method. Lastly, the substrate is polished, an N-side electrode is evaporated, and the substrate is cleaved at one of the rings of the 8-shaped part, whereby an element is formed. A nonreflective coating is applied onto the cleavage concerned to improve the element in coupling efficiency with the outside. |
| 公开日期 | 1991-03-07 |
| 申请日期 | 1989-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88109]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YAMADA HIROHITO. Semiconductor optical negative feedback amplifier. JP1991053579A. 1991-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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