Semiconductor laser
文献类型：专利
| 作者 | FUKUZAWA TADASHI; KAYANE NAOKI; NAKATSUKA SHINICHI; SAITO KATSUTOSHI; KAJIMURA TAKASHI |
| 发表日期 | 1987-03-18 |
| 专利号 | JP1987061382A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which is controlled in a lateral mode with longitudinal multimode with excellent beam shape by forming the active region near a laser light outlet as a refractive index waveguide laser and the active region except that as a gain waveguide laser. CONSTITUTION:An N-type Ga0.65Al0.35As clad layer 10, an undoped GaAs/Ga0.5 Al0.5As superlattice laser active layer 11, a P-type Ga0.65Al0.35As clad layer 12 and a P-type GaAs cap layer 13 are sequentially crystalline grown by a molecular beam epitaxial method on a GaAs substrate (N-type) 9. Si ions are implanted to a region 14 with a mask 7, the mask 8 is opened to implant Si ions to a region 15. The region 15 acts as a hole blocking film, and a region 16 is annealed to eliminate superlattice, thereby providing a refractive index smaller than the superlattice. |
| 公开日期 | 1987-03-18 |
| 申请日期 | 1985-09-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88114]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | FUKUZAWA TADASHI,KAYANE NAOKI,NAKATSUKA SHINICHI,et al. Semiconductor laser. JP1987061382A. 1987-03-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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