Semiconductor laser diode array and method of fabricating the same
文献类型：专利
| 作者 | IMAFUJI, OSAMU; YURI, MASAAKI |
| 发表日期 | 2001-08-30 |
| 专利号 | US20010017873A1 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode array and method of fabricating the same |
| 英文摘要 | A semiconductor laser diode array of this invention contains a first laser diode including a first cladding layer of a first conductivity type formed on a substrate, a first active layer formed on the first cladding layer and a second cladding layer of a second conductivity type formed on the active layer; and a second laser diode including a third cladding layer of the first conductivity type formed on the substrate with a space from the first laser diode, a second active layer formed on the third cladding layer and having a larger energy gap than the first active layer and a fourth cladding layer of the second conductivity type formed on the second active layer. The second laser diode further includes a height adjusting buffer layer of the first conductivity type formed between the substrate and the third cladding layer and having a thickness set for placing the second active layer at substantially the same height from the substrate surface as the height from the substrate surface of the first active layer. |
| 公开日期 | 2001-08-30 |
| 申请日期 | 2001-02-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88120]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | IMAFUJI, OSAMU,YURI, MASAAKI. Semiconductor laser diode array and method of fabricating the same. US20010017873A1. 2001-08-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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