A semiconductor laser device
文献类型：专利
| 作者 | SUYAMA, TAKAHIRO; TAKAHASHI, KOHSEI; HAYAKAWA, TOSHIRO; YAMAMOTO, SABURO; KONDO, MASAFUMI |
| 发表日期 | 1988-04-20 |
| 专利号 | EP0214866A3 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | A semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprising a multi-layered semiconductor crystal containing an active region (5) for laser oscillation, wherein the extended portions (13, 14) of the active region (5) which are adjacent to both sides of one facet (12) having the width of a selected value of said device constitute light-absorbing regions by which light in a high-order transverse mode is absorbed to a greater extent than that in a fundamental transverse mode, thereby achieving laser oscillation in a stable fundamental transverse mode up to a high output power. |
| 公开日期 | 1988-04-20 |
| 申请日期 | 1986-09-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88122]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SUYAMA, TAKAHIRO,TAKAHASHI, KOHSEI,HAYAKAWA, TOSHIRO,et al. A semiconductor laser device. EP0214866A3. 1988-04-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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