Optoelectronic integrated circuit
文献类型：专利
| 作者 | OHNAKA, KIYOSHI; TSUJII, HIRAAKI; SASAI, YOICHI; SHIBATA, JUN |
| 发表日期 | 1990-09-11 |
| 专利号 | US4956682 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optoelectronic integrated circuit |
| 英文摘要 | An optoelectronic integrated circuit includes an N+ type cladding layer, an N type cladding layer, an active layer smaller in band gap than the N type cladding layer and a P type waveguide greater in band gap than the active layer sequentially formed on a semi-insulating substrate, a P type cladding layer partially formed on the surface of the P type waveguide, a laser composed of these N+ type and N type cladding layers, active layer, waveguide and P type cladding layer, and an N type emitted layer wider in band gap than the P type waveguide formed partially on the surface of the P type waveguide, thereby composing a heterojunction bipolar transistor using the N type cladding layer as the collector and the P type waveguide as the base. |
| 公开日期 | 1990-09-11 |
| 申请日期 | 1988-02-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88127]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | OHNAKA, KIYOSHI,TSUJII, HIRAAKI,SASAI, YOICHI,et al. Optoelectronic integrated circuit. US4956682. 1990-09-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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