Semiconductor light emitting element and manufacture thereof
文献类型：专利
| 作者 | YOSHIDA NAOTO |
| 发表日期 | 1992-09-09 |
| 专利号 | JP1992253389A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element and manufacture thereof |
| 英文摘要 | PURPOSE:To suppress diffusion of impurity to an active layer of an upper clad layer in a semiconductor light emitting element having a double hetero structure in which an active layer is interposed to be held between upper and lower clad layers having larger band gap than that of the active layer by using group III element and phosphorus, a current block layer 11 formed at a mesa of the upper layer, and further a contact layer 12 formed above the upper layer and the block layer. CONSTITUTION:Layers (13, 14) containing phosphorus are provided under at least one of a current block layer 11 and a contact layer 12 while processing in an atmosphere containing phosphorus. |
| 公开日期 | 1992-09-09 |
| 申请日期 | 1991-01-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88128]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YOSHIDA NAOTO. Semiconductor light emitting element and manufacture thereof. JP1992253389A. 1992-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。