Distributed reflection semiconductor laser
文献类型：专利
| 作者 | SUZAKI SHINZO; KATSUTA HIROHIKO; WATANABE TSUTOMU; NOMURA TAKASHI; OSANAI YUTAKA; SUEMATSU YASUHARU |
| 发表日期 | 1988-07-13 |
| 专利号 | JP1988169091A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed reflection semiconductor laser |
| 英文摘要 | PURPOSE:To prevent a leakage current ad obtain the low threshold current, high efficiency, and high output of a semiconductor laser by causing a layer for burying an inverse mesa-stripe to be composed of the first buried layer of a conductivity type which is contrary to that of a semiconductor substrate as well as the second buried layer of the same conductivity type as that of the semiconductor substrate. CONSTITUTION:A stripe 21a is formed at a plane of a substrate 21 extending from the front end plane to around the center part of the substrate and a current bottleneck layer 22 performs an epitaxial growth on an upper lane of the stripe 21a. In such a case, the current bottleneck layer 22 is formed to have the almost same height as that of the stripe 21a. Since its current bottleneck layer 22 is prepared at an external waveguide region GE, its structure prevents a leakage current passing through the external waveguide layer GE. As the buried layer is composed of the first buried layer 30 of a conductivity type which is contrary to that of the substrate as well as the second buried layer 31 of the same conductivity type as that of the substrate, its configuration prevents the leakage current passing through the buried layer. Thus, a distributed reflection semiconductor laser of the low threshold current, high output, and high efficiency is obtained. |
| 公开日期 | 1988-07-13 |
| 申请日期 | 1987-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88129]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZO,KATSUTA HIROHIKO,WATANABE TSUTOMU,et al. Distributed reflection semiconductor laser. JP1988169091A. 1988-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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