Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | OKUDA HAJIME |
| 发表日期 | 1992-04-08 |
| 专利号 | JP1992106992A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a beam having aspect ratio of 3 or less without reducing temperature characteristic, reliability by forming a width at the endmost part exposed at the ridge of a second conductivity type second clad layer narrower than that at the intermediate part. CONSTITUTION:A thick n-type clad layer 2, a nondoped active layer 3, a p-type first clad layer 4, a p-type etching stop layer 5, and a p-type etching layer 16 are sequentially continuously grown from a lower layer on an n-type GaAs substrate A substantially stripelike SiO2 film 17 is formed partly on the layer 16. With the film 17 as a mask the layer 16 is selectively etched to the layer 5. Thus, substantially stripelike ridge layer 12 is formed by etching the layer 16, and retained partly on the layer 5. A current blocking layer 7 is grown on a residue not formed with the layer 12 on the layer 5. After the film 17 on the layer 12 is removed, a contact layer 8 is grown on the layer 7. A p-type electrode 9 is formed on the layer 8, and an n-type electrode 10 is formed on the lower surface of the substrate 1 by depositing to form a laser wafer. |
| 公开日期 | 1992-04-08 |
| 申请日期 | 1990-08-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88130]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | OKUDA HAJIME. Semiconductor laser and manufacture thereof. JP1992106992A. 1992-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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