Semiconductor laser element
文献类型：专利
| 作者 | MATSUMOTO AKIHIRO; HOSOBANE HIROYUKI; MATSUI KANEKI |
| 发表日期 | 1991-01-30 |
| 专利号 | JP1991022583A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent the end face of a semiconductor laser of this design from deteriorating even if the laser is made to operate at a high output power so as to improve it in reliability by a method wherein the thickness of a clad layer sandwiched between a optical waveguide and a substrate is made larger at a region near the end face than at the inner region of a resonator. CONSTITUTION:An N-GaAs current constriction layer 11 is grown in crystal on a P-GaAs substrate 10, and then photoresist 20 is applied thereon, and a stripe-like V-shaped groove 21 is so formed as to reach to the substrate 10. A region near the end face of the V-shaped groove 21 is etched through a RIBE(Reactive Ion Beam Etching) method using the photoresists 20 and 22 as a mask. By making the ion beam obliquely incident on the substrate 10, a V-shaped groove 23 is formed into such a structure that it becomes gradually deeper starting from the central region of a resonator toward one of the end faces of the resonator. The same as above, by the etching executed starting from the other end face of the resonator, a V-shaped groove 25 is formed into such a structure that it becomes gradually deeper starting the central region of the resonator to the end faces of the resonator. A clad layer 23 is grown on a current blocking layer 11 on which the V-shaped groove 25 has been provided to make the surface of the layer 11 flat, and then an active layer, a clad layer 14, and a contact layer 15 are successively laminated. |
| 公开日期 | 1991-01-30 |
| 申请日期 | 1989-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88131]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO AKIHIRO,HOSOBANE HIROYUKI,MATSUI KANEKI. Semiconductor laser element. JP1991022583A. 1991-01-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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