Manufacture of semiconductor device
文献类型：专利
| 作者 | HASHIMOTO AKIHIRO; KOBAYASHI NOBUO; KAMIJO TAKESHI |
| 发表日期 | 1988-12-19 |
| 专利号 | JP1988310189A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To eliminate the formation of a high resistance layer on a regrown boundary and the difficulty of a regrowth by disordering the superlattice structure of a superlattice structure clad layer except a stripe by heat treating by means of impurity diffusion from a current narrowing layer. CONSTITUTION:After a current narrowing layer is formed in a buried shape except a stripe on a substrate 1, a clad layer 4, an active layer 5, a clad layer 6 and a cap layer 7 of a superlattice structure are sequentially grown on the substrate Then, the superlattice structure of the layer 4 is then disordered by heat treating except the stripe by means of an impurity diffusion from the narrowing layer. Accordingly, the step of regrowing on a crystal layer having high mixed crystal ratio of exposed aluminum is eliminated. Thus, a high resistance layer is not formed on a regrown boundary and the difficulty of regrowth is eliminated. |
| 公开日期 | 1988-12-19 |
| 申请日期 | 1987-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88135]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO AKIHIRO,KOBAYASHI NOBUO,KAMIJO TAKESHI. Manufacture of semiconductor device. JP1988310189A. 1988-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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