Semiconductor laser device
文献类型：专利
| 作者 | TAKAMI AKIHIRO; MURAKAMI TAKASHI |
| 发表日期 | 1988-06-23 |
| 专利号 | JP1988151094A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the characteristics of a diffraction grating by so forming an active layer that a multiple quantum well structure section and a mixed crystal section are regularly repeated in a resonator direction. CONSTITUTION:An active layer 4 of a structure in which a mixed crystal section 4B and a multiple quantum well structure section 4A are regularly repeated in a resonator direction is provided, and the layer 4 is utilized as a diffraction grating. The structure section 4A is made of a GaAs-AlGaAs hetero junction on which an N-type AlGaAs clad layer 2 is grown, and the mixed crystal section 4B is formed by selectively implanting Si ions in a direction substantially perpendicular to the section 4A and annealing it. Then, a P-type AlGaAs clad layer 5 is crystal-grown on a protective layer on the section 4A. Since the refractive index of the section 4A is reduced by mixed crystallization, if the mixed crystallization is controlled at a pitch of approx. 3000Angstrom , the periodic change of the refractive index can be obtained. Since such a periodic change of the refractive index is of a regular array of reflectors having different refractive indexes, it operates as a diffraction grating. |
| 公开日期 | 1988-06-23 |
| 申请日期 | 1986-12-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88136]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAKAMI AKIHIRO,MURAKAMI TAKASHI. Semiconductor laser device. JP1988151094A. 1988-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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