Manufacture of semiconductor laser
文献类型：专利
| 作者 | ASAGA TATSUYA |
| 发表日期 | 1991-05-29 |
| 专利号 | JP1991126285A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To achieve an active layer and a window region with improved crystallizability with enhanced reproducibility and obtain a sharp interface by limiting a substrate temperature and a growth pressure within a specific range during growth of an activation layer consisting of a III-V compound semiconductor using the organic metal chemical vapor growth method. CONSTITUTION:An n-type GaAs buffer layer 103, an n-type Al0.4Ga0.6As clad layer 104, an Al0.15Ga0.85As clad layer 109, a p-type Al0.4Ga0.6As clad layer 105, and a p-type GaAs contact layer 106 are lamination-formed in sequence on an n-type GaAs substrate 102 by the organic metal chemical vapor growth method. When forming an active layer, ultraviolet-rays are applied to a region near the end face of an equipment for resonance and a window region 110 with a mixed crystal composition ratio which is different from that of an active layer is formed. While the active layer is growing, the substrate temperature may be 500 deg.C to 900 deg.C for obtaining a proper crystal but may be approximately 700 deg.C to achieve the best crystallizability. Also, a sharp interface without any practical problems can be obtained at 1Torr or more and 300Torr or less. |
| 公开日期 | 1991-05-29 |
| 申请日期 | 1989-10-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88140]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | ASAGA TATSUYA. Manufacture of semiconductor laser. JP1991126285A. 1991-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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