Buried type semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | IRITA TAKESHI; INOUE TAKESHI; YAMAGUCHI AKIRA |
| 发表日期 | 1992-03-12 |
| 专利号 | JP1992079282A |
| 著作权人 | HIKARI KEISOKU GIJIYUTSU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To make a burying growth smoothly by using the plane of [110] as a growth stop plane. CONSTITUTION:A mesa stripe 11 is formed on a (100) n-type GaAs substrate 1 or a crystal plane which has made a growth on the substrate 1, thereby forming a mesa stripe in the direction of [001] or [010]. Then, on the substrate 1 where the mesa stripe 11 is formed, by the MOVPE technique n-type buffer layers 12 and 22, n-type clad layers 13 and 23, active layers 14 and 24, p-type clad first layers 15 and 25, and an n-type current block layer 26 are formed by crystal growth. Then, a p-type clad second layer 7 and a p-type cap layer 8 are adapted to grow on the p-type clad first layer 15 which is a tip of a triangle, and the n-type current block layer 26. In this manner, a p-i-n double heterostructure is formed in the upper part and the lower part of the active layer 14. On the other hand, a p-n-p-i-n structure in the upper part and the lower part of the n-type current block layer 26 is formed. This construction makes it possible to utilize the crystal plane and thereby grow a buried layer whose surface is smooth. |
| 公开日期 | 1992-03-12 |
| 申请日期 | 1990-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88141]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI KEISOKU GIJIYUTSU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | IRITA TAKESHI,INOUE TAKESHI,YAMAGUCHI AKIRA. Buried type semiconductor laser and manufacture thereof. JP1992079282A. 1992-03-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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