Semiconductor laser device
文献类型：专利
| 作者 | SHIOZAWA HIDEO; OKUDA HAJIME; HATAGOSHI GENICHI; ISHIKAWA MASAYUKI |
| 发表日期 | 1990-01-31 |
| 专利号 | JP1990030191A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a laser structure which can realize a low threshold current value an a stable transverse-mode characteristic without impairing a feature of an IS laser which can be manufactured easily by a method wherein a current-constriction layer is composed of Ga1-wAlwAs, a cap layer is divided into a coating layer and a contact layer and the coating layer closer to an active layer is composed of Ga1-zAlzAs (where zy); the current-constriction layer 15 is composed of Ga1-wAlwAs; the coating layer 16 is composed of Ga1-zAlzAs (where z<=w). For example, an n-GaAs substrate is used as said semiconductor substrate 1 |
| 公开日期 | 1990-01-31 |
| 申请日期 | 1988-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88142]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | SHIOZAWA HIDEO,OKUDA HAJIME,HATAGOSHI GENICHI,et al. Semiconductor laser device. JP1990030191A. 1990-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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