Integrated semiconductor laser
文献类型：专利
| 作者 | NOMURA YOSHITOKU; MATSUI TERUHITO; TOKUDA YASUKI |
| 发表日期 | 1988-02-12 |
| 专利号 | JP1988032986A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated semiconductor laser |
| 英文摘要 | PURPOSE:To generate laser oscillation on respective quantum levels, by forming an active layer in multiple quantum-wells having barrier width narrowed and electronic states combined and besides by composing plural semiconductor laser elements, which have the similar resonator lengths and the regions where carriers different in size can be injected, on the similar substrate. CONSTITUTION:Cleavage planes 12 and 13 compose a Fabry-Perot resonator. Diffused p-type dopants form a striped waveguide, which runs in parallel with the axis of the resonator, in quantum-well layers. This stripe width is made small because light through the waveguide is more absorbed by free carriers in the diffusion region in the vicinity of the guided-wave path. The lengths LA,LB, and LC in the resonator-length directions of electrodes 4A, 4B, and 4C, become small in the order of them, and LA is equal to the resonator length. If the lengths LA, LB,and LC of the respective electrodes are set up to be ones in which laser oscillation on the respective levels can be generated, laser beams with respective different wavelengths can be oscillated. |
| 公开日期 | 1988-02-12 |
| 申请日期 | 1986-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88143]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NOMURA YOSHITOKU,MATSUI TERUHITO,TOKUDA YASUKI. Integrated semiconductor laser. JP1988032986A. 1988-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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